Abstract: Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years. This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process, simple structure and freedom in substrate choices. This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials. Recent progresses in this ferroelectric memory field, hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems. In this paper, a general review of this type of ferroelectric non-volatile memory is provided, which include the device structure, organic ferroelectric materials, electrical characteristics and working principles. We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.